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| 2SB083040ML 2SB083040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION O 2SB083040ML is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; O O O O O Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; O Chip Size:830m X 830m; Chip Thickness: 28020m; Chip Topography and Dimensions La: Chip Size: 830m; Lb: Pad Size: 670m; O ORDERING SPECIFICATIONS Product Name 2SB083040MLYY Specification For axial leads package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 40 1 30 125 -40~125 Unit V A A C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=1mA IF=1A VR=40V Min. 40 --Max. -0.55 1 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 |
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